inchange semiconductor isc product specification isc silicon npn power transistor BU2525DX description high switching speed high voltage built-in ddamper ddiode applications designed for use in horizontal deflection circuits of large screen color tv receivers absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 1500 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7.5 v i c collector current-continuous 12 a i cm collector current-peak 30 a i b b base current-continuous 8 a i bm base current-peak 12 a p c collector power dissipation @t c =25 45 w t j junction temperature 150 t stg storage temperature range -55~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 2.8 k/w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BU2525DX electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; i b = 0, l= 25mh 800 v v (br)ebo emitter-base breakdown voltage i e = 600ma; i c = 0 7.5 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 1.6a b 5.0 v v be (sat) base-emitter saturation voltage i c = 8a; i b = 1.6a b 1.1 v i ces collector cutoff current v ce = bv ces; v be = 0 v ce = bv ces; v be = 0;t c =125 1.0 2.0 ma i ebo emitter cutoff current v eb = 6v; i c = 0 72 218 ma h fe-1 dc current gain i c = 1a; v ce = 5v 11 h fe-2 dc current gain i c = 8a; v ce = 5v 5 7 9.5 v ecf c-e diode forward voltage i f = 8a 2.0 v c ob output capacitance i e = 0 ; v cb = 10v;f test = 1mhz 145 pf switching times t stg storage time 4.0 s t f fall time i c = 8a , i b( end ) = 1.1a; l b = 2.5 h -v bb = 4v; (-di b /dt= 1.6a/ s) 0.35 s isc website www.iscsemi.cn
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